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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.12.01 Revised Date : 2000.10.01 Page No. : 1/4 HD122 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Description The HD122 is designed for medium power linear and switching applications. Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C) .................................................................................... 40 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................... 100 V BVCEO Collector to Emitter Voltage................................................................................. 100 V BVEBO Emitter to Base Voltage ........................................................................................... 5 V IC Collector Current .............................................................................................................. 4 A IC Collector Current (Pulse) .............................................................................................. 0.1 A Electrical Characteristics (Ta=25C) Symbol BVCBO *BVCEO BVEBO ICEO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 Min. 100 100 5 1000 1000 Typ. Max. 2 1 2 2.5 2.8 2.5 Unit V V V mA mA mA V V V Test Conditions IC=1mA IC=100mA IE=100uA VCE=50V VCB=100V VBE=5V IC=1.5A, IB=30mA IC=2A, IB=40mA IC=3A, VCE=3V IC=0.5A, VCE=3V IC=3A, VCE=3V *Pulse Test : Pulse Width 380us, Duty Cycle2% HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Collector Gain & Collector Current 10000 10000 Spec. No. : Preliminary Data Issued Date : 1998.12.01 Revised Date : 2000.10.01 Page No. : 2/4 Sturation Voltage & Collector Current 25C hFE @ VCE=4V -40C hFE @ VCE=4V Sturation Voltage (mV) 1000 -40C VCE(sat) @ IC=100IB 1000 25C VCE(sat) @ IC=100IB hFE 100 10 1 1 10 100 1000 10000 100 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Sturation Voltage & Collector Current 10000 10000 On Voltage & Collector Current Sturation Voltage (mV) -40 VBE(sat) @ IC=100IB C X 1000 25 VBE(sat) @ IC=100IB C X On Voltage (mV) -40 VBE(on) @ VCE=4V C X 1000 25 VBE(on) @ VCE=4V C X 100 100 1000 10000 100 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Switching Time & Collector Current 10 VCC=30V, IC=250, IB1= -250IB2 1000 Capacitance & Reverse-Biased Voltage Switching Times (us) Tstg Capacitance (pF) 1 Tf Ton 100 Cob 0.1 1 10 10 0.1 1 10 100 Collector Current-IC (A) Reverse-Biased Voltage (V) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1998.12.01 Revised Date : 2000.10.01 Page No. : 3/4 Safe Operating Area 100000 PT=1ms 1.2 1.1 10000 1 Power Derating PD/PD(max) -- Normalized Power Dissipation Collector Current-IC (mA) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 PT=100ms 1000 PT=1s 100 10 1 1 10 100 0 0 50 100 150 200 Forward-VCE (V) Temperature (C) -- Ta/Tc HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension Marking : Spec. No. : Preliminary Data Issued Date : 1998.12.01 Revised Date : 2000.10.01 Page No. : 4/4 A B D E F 3 2 I G 1 J M L K O H HSMC Logo Part Number Date Code Product Series Rank Ink Marking C Style : Pin 1.Emitter 2.Collector 3.Base N 3-Lead TO-126ML Plastic Package HSMC Package Code : D *:Typical DIM A B C D E F G H Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562 Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42 DIM I J K L M N O Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes : 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification |
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